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Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors | npj 2D Materials and Applications
Wurtzite - an overview | ScienceDirect Topics
InGaN/GaN multiple quantum wells on selectively grown GaN microfacets and the applications for phosphor-free white light-emitting diodes - ScienceDirect
Nobel Prize in Physics 2014: Why Were Blue LEDs so Hard to Make?
Impact of a prestrained graded InGaN/GaN interlayer towards enhanced optical characteristics of a multi-quantum well LED based on silicon substrate
Nitride Semiconductors | Van de Walle | Computational Materials Group | UC Santa Barbara
Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 - Advances in Engineering
Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon | Scientific Reports
Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport | ACS Photonics
Bandgaps of wurtzite GaN, AlN and InN and their alloys versus their... | Download Scientific Diagram
Recent Advancements in GaN LED Technology | IntechOpen
Polarity domains in GaN wires mapped at the nanoscale
InGaN/GaN/AlGaN-Based Leds and Laser Diodes | Materials Research Society Internet Journal of Nitride Semiconductor Research | Cambridge Core
Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes
Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport | ACS Photonics
Recent Advancements in GaN LED Technology | IntechOpen
Gallium nitride - Wikipedia
Ultra-stable emission from green micro-LEDs on silicon